● High-quality device to perform bulk etching silicon wafers surfaces with O3 and HF.
● No droplets generate on wafer surface because of etching with gas.
● Uniformity / Flatness of wafers after etching process is within 10%.
● Contaminants generated during etching process do not move to other places.
● Bulk etching is performed on the entire surface with wafers, but partial evaluation is also possible by mapping
● Wafers are handled manually, however the equipment is controlled on PC, it is easy to operate.
|Bulk Etching Function||〇|
|Recovery Rate||within ±10%|
|Uniformity / Flatness of
Wafers after Etching Process
|Size (W×D×H) (*1)||1000×1300×2000(mm)|
|Recommended Environment||Inside Clean Draft|
|Utilities||O2, N2, HF, DIW, AC-100-200V,
Acid Drain & Exhaust, General Exhaust